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N-Channel Power MOSFET
General Features
VDS =60V,ID =17A RDS(ON) <75 mΩ @ VGS=10V RDS(ON) <90 mΩ @ VGS=4.5V
Improved dv/dt capability High density cell design for ultra low Rdson Good stability and uniformity with high EAS Excellent package for good heat dissipation
Applications
Power switching application Hard switched and high frequency circuits Motor drive
SL17N06D
Schematic diagram TO252 Pin Configuration
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃)
Pulsed Drain Current Maximum Power Dissipation Derating factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID(25℃)
ID (100℃)
IDM PD
TJ,TSTG
Limit
60 ±20 17 12 44 25 0.
SL17N06D Datasheet
