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ST1002
N Channel Enhancement Mode MOSFET
3.0A
DESCRIPTION
The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high
side switching.
PIN CONFIGURATION SOT-23-3L
3
D
G
S
1
2
FEATURE
100V/3.0A, RDS(ON) = 135mΩ @VGS = 10V
100V/2.5A, RDS(ON) = 140mΩ @VGS = 4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
1.Gate 2.Source 3.