ST1002 Datasheet PDF | Stanson Technology

Stanson Technology ST1002

The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching.

Part No.	ST1002
Datasheet	ST1002 Download
Manufacturer	Stanson Technology
Description	N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 FEATURE 100V/3.0A, RDS(ON) = 135mΩ @VGS = 10V 100V/2.5A, RDS(ON) = 140mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L 3 102YA 1 2 Y: Year Code A: Produce Code 1 120 Bentley Square, Mountain View, Ca 94040 USA ST1002 2013 . V1 ST1002 N Channel Enhancement Mode MOSFET 3.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 100 Gate-Source Voltage Continuous Drain Current TJ=150℃ Pulsed Drain Current VGSS ±20 TA=25℃ TA=70℃ ID 5.0 3.0 IDM 15 Continuous Source Current (Diode Conduction) IS 1.9 Power Dissipation TA=25℃ TA=70℃ PD 2.0 1.2 Operation Junction Temperature TJ -55/150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 75 Unit V V A A A W ℃ ℃ ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA ST1002 2013 .