ST1004SRG Datasheet PDF | Stanson Technology

Stanson Technology ST1004SRG

ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.

Part No.	ST1004SRG
Datasheet	ST1004SRG Download
Manufacturer	Stanson Technology
Description	N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE 100V/1.0A, RDS(ON) = 310mΩ @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 104YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST1004SRG 2013. V1 ST1004SRG N Channel Enhancement Mode MOSFET 2.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain Current=150℃) Pulsed Drain Current Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ TA=25℃ TA=70℃ VDSS VGSS ID IDM PD TJ 100 ±20 3.0 2.0 10 1.25 0.8 150 Storgae Temperature Range Thermal Resistance-Junction to Ambient TSTG RθJA -55/150 100 Unit V V A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST1004SRG 2013. V1 ST1004SRG N Channel Enhancement Mode MOS...