Datasheet4U Logo Datasheet4U.com

ST1004SRG - N-Channel Enhancement Mode MOSFET

General Description

ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers.

📥 Download Datasheet

Datasheet Details

Part number ST1004SRG
Manufacturer Stanson Technology
File Size 1.24 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST1004SRG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE 100V/1.0A, RDS(ON) = 310mΩ @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 104YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.