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STN410D - MOSFET

General Description

STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number STN410D
Manufacturer Stanson Technology
File Size 489.19 KB
Description MOSFET
Datasheet download datasheet STN410D Datasheet

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STN410D N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 30V/ 15.0A, RDS(ON) = 40mΩ @VGS = 10V 30V/8.0A, RDS(ON) =50mΩ @VGS = 4.