SSP20N60S Datasheet | Super Semiconductor

Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features - 650V @TJ = 150°C - Typ. RDS(on) = 0.16  - Ultra Low Gate Charge (typ. Qg = 70n C) - 100% avalanche tested TO-220 GD S TO-220F Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed Gate-Source voltage Single Pulsed Avalanche...