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TP2104 - P-Channel Enhancement-Mode Vertical DMOS FETs

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s wellproven, silicon-gate manufacturing process.

Key Features

  • High input impedance and high gain.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • Free from secondary breakdown.

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Datasheet Details

Part number TP2104
Manufacturer Supertex Inc
File Size 398.39 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TP2104 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Supertex inc. TP2104 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► High input impedance and high gain ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► Free from secondary breakdown Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Analog switches ►► Power management ►► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s wellproven, silicon-gate manufacturing process.