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VN22A - N-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C,ss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VN22A
Manufacturer Supertex Inc
File Size 121.84 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VN22A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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o §upertexinc. VN22A N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss / BVOGS 60V 100V ROSION) (max) 0.30 0.30 IOION) (min) lOA lOA Order Number / Package DIE WAFER VN2206ND VN2210ND VN2206NW VN2210NW Preliminary Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C,ss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.