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VP06E - P-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP06E
Manufacturer Supertex
File Size 218.41 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP06E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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"§upertexinc. VP06E P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -450V -500V ROS(ON) (max) 200 200 IO(ON) (min) -0.2A -0.2A TO-39 VP0645N2 VP0650N2 Order Number I Package TO-92 TO-22O VP0645N3 VP0645N5 VP0650N3 VP0650N5 DICE VP0645ND VP0650ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.