MMBT3906 - SMD General Purpose Transistor

TAITRON

General Description

MMBT3906 Marking Code 2A -VCBO Collector-Base Voltage 40 -VCEO Collector-Emitter Voltage 40 -VEBO Emitter-Base Voltage 5.0 -IC Collector Current 200 Ptot Power Dissipation above 25°C 250 RθJA Thermal Resistance from Junction to Ambient 450 TJ Junction Temperature 150 TSTG Sto

Key Features

PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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MMBT3906 smd general purpose transistor by TAITRON - Datasheet Preview

Datasheet Details

Part number	MMBT3906
Manufacturer	TAITRON
File Size	293.70 KB
Description	SMD General Purpose Transistor
Datasheet	MMBT3906 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT3906 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT3906 Marking Code 2A -VCBO Collector-Base Voltage 40 -VCEO Collector-Emitter Voltage 40 -VEBO Emitter-Base Voltage 5.