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TEMIC
Siliconix
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)nSS (V) -200
rnS(on) (Q) 0.80
In (A) -5.7
TO·257AB
S
Hermetic Package
o
2N7090
Case Isolated
GD S ThpView
D P-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (Tl = 150'C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage 1l:mperature Range
Lead Temperature e1t6" from case for 10 sec.)
I Tc=25'C ITc= 100'C
I Tc=25'C ITc= 100'C
Symbpl VDS
VGS
ID IDM PD Tl,Tstg TL
Umlt
-200 ±20 -5.7 -3.6 -23 60 25 -55 to 150 300
Unit
V A W 'C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case Case-ta-Sink
P-37012-Rev.
2N7090 Datasheet
