TGS 2SC1008
Transistors
FEATURES
z General Purpose Switching and Amplification TO – 92 1. EMITTER 2. BASE 3. COLLECTORMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 60 8 700 800 156 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE (sat) Cob fT Test conditions IC= 0.1mA,IE=0 IC=10mA,IB=0 IE=0.01mA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=2V, IC=50mA IC=500mA,...