Weitron 2SC1008
NPN Transistor
| Part No. | 2SC1008 |
|---|---|
| Datasheet | 2SC1008 Download |
| Manufacturer |  Weitron |
| Description | NPN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO ICM PCM TJ Tstg Value 80 0.7 0.8 -55 to +150 -55 to +150 Units V A W °C °CELECTRICAL CHARACTERISTICS
(Tamb=25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO IEBO hFE VCE(sat) Test conditions IC= 100µA, IE=0 IC= 10mA, IB=0 IE= 10µA, IC=0 VCB= 60V, IE=0 VEB= 5V, IC=0 VCE= 2V, IC= 50mA IC=500mA, IB= 50mA MIN 80 60 8 40 Base-emitter saturation voltage Transition Frequency V BE(sat) fT IC=500mA, IB= 50mA VCE=10V,IC=50mA 30 TYP MAX 0.1 0.1 400 0.4 1.1 Units V V V µA µA V V MHz CLASSIFICATION OF hFE Rank R Range 40-80 O 70-140 Y 120-240 G 200-400 WEITRON hpp:// 1/3 15-Feb-2011 2SC1008 Typical...
