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2SC1008 - NPN Transistor

General Description

NPN high-voltage transistor

Low current (max.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

in high voltage applications , such as telephony applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 700 mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ Ta<50℃ J Junction Temperature Tstg Storage Temperature Range INCHANGE Semiconductor 2SC1008 VALUE 80 60 8 0.7 0.8 -55~150 -55~150 UNIT V V V A W ℃ ℃ isc website:www.iscsemi.