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isc Silicon NPN Power Transistor
DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 700 mA) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switching and amplification
in high voltage applications , such as telephony applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Ta<50℃
J
Junction Temperature
Tstg
Storage Temperature Range
INCHANGE Semiconductor
2SC1008
VALUE 80 60 8 0.7 0.8
-55~150 -55~150
UNIT V V V A W
℃ ℃
isc website:www.iscsemi.