| Part Number | 2SC1008 Datasheet |
|---|---|
| Manufacturer | Weitron |
| Overview | WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 2SC1008 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collecto. V V MHz CLASSIFICATION OF hFE Rank R Range 40-80 O 70-140 Y 120-240 G 200-400 WEITRON hpp:// 1/3 15-Feb-2011 2SC1008 Typical Characteristics WEITRON hpp:// 2/3 15-Feb-2011 H L 2SC1008 TO-92 Outline Dimensions E C J K G unit: mm TO-92 Dim M in . |
2SC1008 Datasheet and Specifications PDF
The 2SC1008 is a NPN Transistor.
Key Specifications
| Part Number | 2SC1008 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·NPN high-voltage transistor ·Low current (max. 700 mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switching and amplification in h. ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC=50mA ; VCE= 2V 2SC1008 MIN TYP. MAX UNIT 0.4 V 1.1 V 0.1 uA 0.1 uA 40 400 isc website： 2 isc & iscsemi is registered trademark isc Silicon NPN Power Tran. |
| Part Number | 2SC1008 Datasheet |
|---|---|
| Description | Transistors |
| Manufacturer | TGS |
| Overview |
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SC1008 TRANSISTOR (NPN)
FEATURES z General Purpose Switching and Amplification
TO – 92
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATING.
z General Purpose Switching and Amplification
TO * 92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipa. |
| Part Number | 2SC1008 Datasheet |
|---|---|
| Description | Transistors |
| Manufacturer | TRANSYS Electronics Limited |
| Overview | Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1008 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0.8 W (Tamb=25℃) 2. BASE . Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0.8 W (Tamb=25℃) 2. BASE Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Col. |