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DB4 - Silicon Bidirectional Diacs

Features

  • The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors. They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These diacs are intended for use in CCCthyrisitors phase control,circuits for lamp dimming, FFFI universal motor speed control,and heat control.

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Datasheet Details

Part number DB4
Manufacturer TGS
File Size 132.18 KB
Description Silicon Bidirectional Diacs
Datasheet download datasheet DB4 Datasheet
Additional preview pages of the DB4 datasheet.

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    Full PDF Text Transcription

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    TIGER ELECTRONIC CO.,LTD DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These diacs are intended for use in CCCthyrisitors phase control,circuits for lamp dimming, FFFI universal motor speed control,and heat control.
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