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MJE2955T Datasheet Complementary Silicon Power Ttransistors

Manufacturer: TGS

Overview: TIGER ELECTRONIC CO.,LTD E Product specification plementary Silicon Power Ttransistors MJE3055T /.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number MJE2955T
Manufacturer TGS
File Size 65.89 KB
Description Complementary Silicon Power Ttransistors
Datasheet MJE2955T MJE3055T Datasheet (PDF)

General Description

It is intented for use in power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max.

Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 60 V 5V 10 A 6A 75 W 150 oC -55~150 oC TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current ICEO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO hFE(1) hFE(2) IC=100mA, IB=0 VCE=4V, IC=4.0A VCE=4V, IC=10.0A Collector-Emitter Saturation Voltage VCE(sat) IC=4.0A,IB=400mA IC=10.0A,IB=3.3A Base-Emitter Saturation Voltage VBE(sat) VCE=4V,IC=4.0A Current Gain Bandwidth Product f

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