SB073P200-W-AG Datasheet | TRANSYS Electronics Limited

SB073P200-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode .. Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Current @ 125 C (2) Junction Operating Temperature Range (2) Storage Temperature Range (2) Symbol Unit VRRM VF IF(AV) IR IR TJ TSG Volt Volt Amp SB073P200-W-Ag/Al (See ordering code below) 200 0.85 5 10 5 -65 to +150 -65 to +150 µA m A (1) Pulse Width tp = < 300µS, Duty Cycle <2% (2) The characteristics above assume the die are assembled in indusry standard packages using appropriate attach methods. Ordering Code SB040P150-W-Ag Schottky Barrier 40 Mils Pt Barrier 150 Volt Wafer Ti/Ni/Ag Mechanical Dimensions Wafer Die Wafer Diameter - 100 mm (4") Wafer Thickness 420 +/- 20 Top (Anode) - Ti/Ni/Ag (Suffix "Ag") or Aluminium (Suffix "Al") Bottom (cathode) Ti/Ni/Ag 64.5 (1.64) 73 (1.85) 64.5...