2N6520
2N6520 is PNP Transistor manufactured by TRANSYS.
FEATURES
Power dissipation
PCM : 0.625 W (Tamb=25℃)
Collector current
ICM : -0.5 Collector-base voltage
V(BR)CBO : -350
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage Base-emitter voltage Transition frequency
V(BR)CBO V(BR)CEO-
Ic= -100 µA , IE=0 IC= -1 m A , IB=0
-350 -350
V(BR)EBO
IE= -10 µA, IC=0
-5
ICBO VCB= -250 V , IE=0
IEBO h FE
VCE(sat)
VBE(sat)
VBE(on) f
- T
VEB= -4 V , IC=0
VCE=-10 V, IC= -1 m A VCE=-10 V, IC= -10 m A VCE=-10 V, IC= -30 m A...
