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2N6520 Datasheet PDF

TRANSYS 2N6520

PNP Transistor

Part No. 2N6520
Datasheet 2N6520 Download
Manufacturer
TRANSYS
Description PNP Transistor
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2N6520 datasheet page 1 preview

FEATURES

Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.5 Collector-base voltage A V(BR)CBO : -350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123

ELECTRICAL CHARACTERISTICS

(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency V(BR)CBO V(BR)CEO* Ic= -100 µA , IE=0 IC= -1 mA , IB=0 -350 -350 V(BR)EBO IE= -10 µA, IC=0 -5 ICBO VCB= -250 V , IE=0 IEBO hFE VCE(sat) VBE(sat) VBE(on) f * T VEB= -4 V , IC=0 VCE=-10 V, IC= -1 mA VCE=-10 V, IC= -10 mA VCE=-10 V, IC= -30 mA VC