TMD3N80G - N-channel MOSFET

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.2 W(max) @ VGS= 10 V D-PAK I-PAK D Device TMD3N80G/TMU3N80G Package D-PAK/I-PAK G S Marking TMD3N80G/TMU3N80G Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC.

TMD3N80G n-channel mosfet by TRinno - Datasheet Preview

Datasheet Details

Part number	TMD3N80G
Manufacturer	TRinno
File Size	325.49 KB
Description	N-channel MOSFET
Datasheet	TMD3N80G Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TMD3438-1	Microwave Power MMIC Amplifier	Toshiba
TMD3702VC	Color and Proximity Sensor	ams
TMD3719	ALS/Color and Proximity Sensor	ams
TMD3721	ALS/Color and Proximity Sensor	ams
TMD3725	Color and Proximity Sensor	ams

Other Datasheets by TRinno

Part Number	Description
TMD3N40ZG	N-channel MOSFET
TMD3N50AZ	N-channel MOSFET
TMD3N50AZG	N-channel MOSFET
TMD3N50Z	N-channel MOSFET
TMD3N50ZG	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.