TMU4N60AZG Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification - Improved ESD performance D-PAK TMD4N60AZ(G)/TMU4N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.0A < 2.5W I-PAK Device TMD4N60AZ / TMU4N60AZ TMD4N60AZG / TMU4N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Marking TMD4N60AZ / TMU4N60AZ TMD4N60AZG / TMU4N60AZG Remark Ro HS Halogen Free Symbol VDSS VGS IDM EAS IAR EAR PD dv/dt TJ,...