TMU4N60AZG - N-channel MOSFET

Download the TMU4N60AZG datasheet PDF. This datasheet also covers the TMU4N60AZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification.
Improved ESD performance D-PAK TMD4N60AZ(G)/TMU4N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.0A < 2.5W I-PAK Device TMD4N60AZ / TMU4N60AZ TMD4N60AZG / TMU4N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

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TMU4N60AZG n-channel mosfet by TRinno - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TMU4N60AZ-TRinno.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TMU4N60AZG
Manufacturer	TRinno
File Size	453.63 KB
Description	N-channel MOSFET
Datasheet	TMU4N60AZG Datasheet

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Other Datasheets by TRinno

Part Number	Description
TMU4N60AZ	N-channel MOSFET
TMU4N65AZ	N-channel MOSFET
TMU4N65AZG	N-channel MOSFET
TMU4N65Z	N-channel MOSFET
TMU4N65ZG	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N60AZ(G)/TMU4N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.0A < 2.