TT 2N3019
NPN SILICON TRANSISTOR
| Part No. | 2N3019 |
|---|---|
| Datasheet | 2N3019 Download |
| Manufacturer |  TT |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
.● Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 800mW Derate Above 25°C 4.57mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 50°C 33.3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 218.75 30 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
