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2N4236 Datasheet PDF

TT 2N4236

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Part No. 2N4236
Datasheet 2N4236 Download
Manufacturer
TT
Description SILICON PLANAR EPITAXIAL PNP TRANSISTOR
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2N4236 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 1.0A IB Base Current 0.5A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.7mW/°C PD Total Power Dissipation at TC = 25°C 6W Derate Above 25°C 34mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 175 29 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
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