TT 2N5415
SILICON PNP TRANSISTORS
| Part No. | 2N5415 |
|---|---|
| Datasheet | 2N5415 Download |
| Manufacturer |  TT |
| Description | SILICON PNP TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) Symbols Parameters VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current – Continuous IB Base Current PD Total Power Dissipation at TA= 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range 2N5415 2N5416 -200V -350V -200V -300V -4V -6V -1.0A -0.5A 1.0W 5.71mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max. 175 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Lei...
