2N5876 - HIGH POWER SILICON PNP TRANSISTORS

TT Electronics

Datasheet Details

Part number	2N5876
Manufacturer	TT Electronics
File Size	181.73 KB
Description	HIGH POWER SILICON PNP TRANSISTORS
Datasheet	2N5876 Datasheet

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Other Datasheets by TT Electronics

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HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 (PNP) 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Continuous Collector Current IB Base Current PD Total Power Dissipation at TC = 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case 2N5876 PNP 2N5878 NPN -80V 80V -80V 80V -5V 5V 10A 4A 150W 0.857W/°C -65 to +200°C -65 to +200°C Max. 1.