BUP53 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	BUP53
Manufacturer	TT Electronics
File Size	190.16 KB
Description	SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Datasheet	BUP53 Datasheet

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEX Collector – Emitter Voltage VBE = -1.5V 400V VCEO Collector – Emitter Voltage 250V VEBO Emitter – Base Voltage 10V IC Continuous Collector Current 60A ICM Peak Collector Current 80A PD Total Power Dissipation at TC = 25°C 300W Derate Above 25°C 1.72W/°C TJ Junction Temperature Range -55 to +200°C Tstg Storage Temperature Range -55 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.