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OP236 - High Reliability Hermetic Infrared Emitting Diode

Download the OP236 datasheet PDF. This datasheet also covers the OP235TX variant, as both devices belong to the same high reliability hermetic infrared emitting diode family and are provided as variant models within a single manufacturer datasheet.

General Description

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads.

Key Features

  • TO-46 hermetically sealed package with lens.
  • Twice the power output of GaAs at same drive current.
  • Characterized to define infrared energy along mechanical axis of device.
  • Narrow beam angle.
  • Processed to MIL-PRF-19500.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OP235TX-TT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number OP236
Manufacturer TT Electronics
File Size 406.86 KB
Description High Reliability Hermetic Infrared Emitting Diode
Datasheet download datasheet OP236 Datasheet

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Other Datasheets by TT Electronics

Part Number Description
OP236TX High Reliability Hermetic Infrared Emitting Diode
OP236TXV High Reliability Hermetic Infrared Emitting Diode
OP230WPS Point Source Hermetic Infrared Emitting Diode
OP235TX High Reliability Hermetic Infrared Emitting Diode
OP205CL Infrared Light Emitting Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Reliability Hermetic Infrared Emitting Diode OP235TX, OP236 (TX, TXV) Obsolete (OP235TXV) Features: • TO-46 hermetically sealed package with lens • Twice the power output of GaAs at same drive current • Characterized to define infrared energy along mechanical axis of device • Narrow beam angle • Processed to MIL-PRF-19500 Description: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors.