OP236TXV Overview
Key Specifications
Package: TO-46-2
Mount Type: Through Hole
Pins: 2
Max Operating Temp: 125 °C
Description
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors.
Key Features
- TO-46 hermetically sealed package with lens
- Twice the power output of GaAs at same drive current
- Characterized to define infrared energy along mechanical axis of device
- Narrow beam angle
- Processed to MIL-PRF-19500
