OP236TXV Description
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide.
OP236TXV Key Features
- TO-46 hermetically sealed package with lens
- Twice the power output of GaAs at same drive current
- Characterized to define infrared energy along mechanical axis of device
- Narrow beam angle
- Processed to MIL-PRF-19500