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2SA1417 - Transistor

Key Features

  • Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range.
  • Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC.
  • Tj Tstg Rating -120 -100 -6 -2 -3 500 1.5 150 -55 to +150 Unit V V V A A mW W Electrical.

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Datasheet Details

Part number 2SA1417
Manufacturer TY Semiconductor
File Size 587.26 KB
Description Transistor
Datasheet download datasheet 2SA1417 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Product specification 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -120 -100 -6 -2 -3 500 1.