Datasheet4U Logo Datasheet4U.com

2SA1419 - Transistor

Key Features

  • Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range.
  • Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC PC.
  • Tj Tstg Rating -180 -160 -6 -1.5 -2.5 500 1.5 150 -55 to +150 Unit V V V A A mW W Electrical.

📥 Download Datasheet

Datasheet Details

Part number 2SA1419
Manufacturer TY Semiconductor
File Size 598.85 KB
Description Transistor
Datasheet download datasheet 2SA1419 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1419 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SA1419 Transistor Kexin
2SA1419 Bipolar Transistor ON Semiconductor
2SA1411 Transistor ETC
2SA1411 Transistor Kexin

Other Datasheets by TY Semiconductor

Part Number Description
2SA1411 Transistor
2SA1415 Transistor
2SA1416 Transistor
2SA1417 Transistor
2SA1418 Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Product specification 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -180 -160 -6 -1.5 -2.5 500 1.