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2SB805 - Transistor

Key Features

  • High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse).
  • 1 Collector power dissipation Junction temperature Storage temperature.
  • 1. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating -100 -100 -5 -0.7 -1.2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter c.

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Datasheet Details

Part number 2SB805
Manufacturer TY Semiconductor
File Size 95.78 KB
Description Transistor
Datasheet download datasheet 2SB805 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification 2SB805 Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Collector power dissipation Junction temperature Storage temperature *1. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating -100 -100 -5 -0.7 -1.