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2SB806 - Transistor

Key Features

  • 1 2 3 ¡ñ High collector to emitter voltage: VCEO£¾-120V. 0 .8 0 ¡À 0 .1 0.44¡À0.1 2 .6 0 ¡À 0 .1 0 .4 0 ¡À 0 .1 1.Base 2.Collector 3.Emitter Min 0.48¡À0.1 0.53¡À0.1 3.00¡À0.1 ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse).
  • 1 Collector power dissipation Junction temperature Storage temperature.
  • 1. PW¡Ü10ms,duty cycle¡Ü50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rati.

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Datasheet Details

Part number 2SB806
Manufacturer TY Semiconductor
File Size 291.78 KB
Description Transistor
Datasheet download datasheet 2SB806 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification 2SB806 SOT- 89 4.50¡À0.1 1.80¡À0.1 2 .5 0 ¡À 0 .1 4 .0 0 ¡À 0 .1 ¡ö Unit:mm 1.50 ¡À0.1 Features 1 2 3 ¡ñ High collector to emitter voltage: VCEO£¾-120V. 0 .8 0 ¡À 0 .1 0.44¡À0.1 2 .6 0 ¡À 0 .1 0 .4 0 ¡À 0 .1 1.Base 2.Collector 3.Emitter Min 0.48¡À0.1 0.53¡À0.1 3.00¡À0.1 ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Collector power dissipation Junction temperature Storage temperature *1. PW¡Ü10ms,duty cycle¡Ü50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating -120 -120 -5 -0.7 -1.