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Product specification
SOT-89-3L Plastic-Encapsulate Transistors
PXT8050
TRANSISTOR (NPN) SOT-89-3L
FEATURES z Compliment to PXT8550 MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Value 40 25 5 1.5 0.5 150 -55~150 Unit V V V A W ℃
1. BASE 2. COLLECTOR 3. EMITTER
℃
Test conditions IC=100uA, IE=0 IC=0.1mA, IB=0 IE=100μA, IC=0 VCB=40V, IE=0 VCE=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA IB=1A VCE=10V,IC=50mA,f=30MHz VCB=10V,IE=0,f=1MHz 100 15 85 40 0.5 1.2 1 1.55 V V V V MHz pF Min 40 25 5 0.1 0.1 0.