Datasheet Details
| Part number | TSM1N45 |
|---|---|
| Manufacturer | Taiwan Semiconductor Company |
| File Size | 603.55 KB |
| Description | 450V N-Channel Power MOSFET |
| Datasheet |
 TSM1N45 Datasheet
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General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process.
Key Features
- Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±30V guaranteed Block Diagram Ordering Information Part No. TSM1N45CT B0 TSM1N45CT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse.