Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process.
Features
- Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±30V guaranteed
Block Diagram
Ordering Information
Part No. TSM1N45CT B0 TSM1N45CT A3
Package
TO-92 TO-92
Packing
1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse.
TSM1N45 Datasheet
