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TSM2320 - 20V N-Channel Enhancement Mode MOSFET

Features

  • — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2320CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Jun.

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Datasheet Details

Part number TSM2320
Manufacturer Taiwan Semiconductor Company
File Size 295.14 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM2320 Datasheet

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Full PDF Text Transcription

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TSM2320 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ www.DataSheet4U.com Features — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No.
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