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TSM25N03 - 25V N-Channel MOSFET

Description

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Features

  • Block Diagram.
  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM25N03
Manufacturer Taiwan Semiconductor Company
File Size 390.50 KB
Description 25V N-Channel MOSFET
Datasheet download datasheet TSM25N03 Datasheet

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Full PDF Text Transcription

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TSM25N03 25V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 14 @ VGS = 10V 19 @ VGS = 4.5V TO-252 Pin Definition: 1. Gate 2. Drain 3. Source ID (A) 25 25 www.DataSheet4U.com Features Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ● ● Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM25N03CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
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