TSM2N60S Description
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
TSM2N60S Key Features
- Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to D