Datasheet Details
| Part number | TSM2N60S |
|---|---|
| Manufacturer | Taiwan Semiconductor Company |
| File Size | 401.21 KB |
| Description | 600V N-Channel Power MOSFET |
| Datasheet |
 TSM2N60S Datasheet
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General Description
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
Key Features
- Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Contin.