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TSM2N60S - 600V N-Channel Power MOSFET

Description

The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Contin.

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Datasheet Details

Part number TSM2N60S
Manufacturer Taiwan Semiconductor Company
File Size 401.21 KB
Description 600V N-Channel Power MOSFET
Datasheet download datasheet TSM2N60S Datasheet
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Full PDF Text Transcription

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TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source www.DataSheet4U.com PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 5 @ VGS =10V ID (A) 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
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