Datasheet Summary
Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
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20V N-Channel MOSFET w/ESD Protected
VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.)
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application
Block Diagram
Ordering Information
Part No. TSM3460CX6 Packing Tape & Reel 3,000/per reel Package...