TSM3401 Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low Onresistance - Pb-free plating - Ro HS pliant - Halogen-free package Application - Load Switch - PA Switch SOT23 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 90 V mΩ Qg 9.52 n C Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TA = 25°C VGS ID IDM ±20 -3 -10 Continuous Source Current (Diode Conduction) IS -1.9 Total Power Dissipation TA = 25°C PDTOT Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 UNIT V V A A A W...