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TSM3401 - P-Channel Power MOSFET

General Description

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Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low Onresistance.
  • Pb-free plating.
  • RoHS compliant.
  • Halogen-free package.

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Datasheet Details

Part number TSM3401
Manufacturer Taiwan Semiconductor Company
File Size 282.12 KB
Description P-Channel Power MOSFET
Datasheet download datasheet TSM3401 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM3401 Taiwan Semiconductor P-Channel Power MOSFET -30V, -3A, 60mΩ Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low Onresistance ● Pb-free plating ● RoHS compliant ● Halogen-free package Application ● Load Switch ● PA Switch SOT23 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 90 V mΩ Qg 9.52 nC Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TA = 25°C VGS ID IDM ±20 -3 -10 Continuous Source Current (Diode Conduction) IS -1.9 Total Power Dissipation TA = 25°C PDTOT 1.