TSM3442 Datasheet | Taiwan Semiconductor

FEATURES - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance APPLICATION - Load Switch - PA Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.5V RDS(on) (max) VGS = 2.5V 90 mΩ Qg 5.4 n C SOT-26 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range VDS VGS IDM PDTOT TJ, TSTG 20 ±8 4 2.4 8 1.25 - 55 to +150 UNIT V V A W °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT...