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TSM3442 - 20V N-CHANNEL MOSFET

General Description

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Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM3442
Manufacturer Taiwan Semiconductor Company
File Size 182.99 KB
Description 20V N-CHANNEL MOSFET
Datasheet download datasheet TSM3442 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM3442 Taiwan Semiconductor N-Channel Power MOSFET 20V, 4A, 70mΩ FEATURES ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance APPLICATION ● Load Switch ● PA Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.5V 70 RDS(on) (max) VGS = 2.5V 90 mΩ Qg 5.4 nC SOT-26 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT TJ, TSTG 20 ±8 4 2.4 8 1.