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TSM3446 - 20V N-Channel MOSFET

Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM3446
Manufacturer Taiwan Semiconductor Company
File Size 175.66 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet TSM3446 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source TSM3446 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V ID (A) 5.3 4.4 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM3446CX6 RF SOT-26 3Kpcs / 7” Reel TSM3446CX6 RFG SOT-26 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current, VGS @4.5V. ID Pulsed Drain Current, VGS @4.