TSM3446 Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Application - Load Switch - PA Switch Ordering Information Part No. Package Packing TSM3446CX6 RF SOT-26 3Kpcs / 7” Reel TSM3446CX6 RFG SOT-26 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation Ta = 25o C Ta = 70o C IDM IS Operating Junction Temperature Operating Junction and Storage Temperature Range TJ, TSTG Thermal Performance...