TSM3443 Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design f Por Ultra Low On-resistance Application - Load Switch - PA Switch Ordering Information Block Diagram Part No. Package Packing TSM3443CX6 RF SOT-26 3Kpcs / 7” Reel TSM3443CX6 RFG SOT-26 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Ratings (TA=25o C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation TA=25o C TA=70o C Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM IS TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note 1: Pulse width limited by the Maximum junction temperature Note 2: Surface Mounted on FR4 Board, t ≤ 5 sec Symbol RӨJC RӨJA P-Channel MOSFET Limit -20 ±12 -4.7 -20 -1.7 2 1.3 +150 - 55 to +150 Limit 30 80 Unit V V A A...