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TSM3443 - 20V P-CHANNEL MOSFET

General Description

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Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design fPor Ultra Low On-resistance.

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Datasheet Details

Part number TSM3443
Manufacturer Taiwan Semiconductor Company
File Size 202.21 KB
Description 20V P-CHANNEL MOSFET
Datasheet download datasheet TSM3443 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM3443 20V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS (V) RDSON (mΩ) 60 @ VGS = -4.5V -20 100 @ VGS = -2.5V ID (A) -4.7 -3.8 Features ● Advance Trench Process Technology ● High Density Cell Design fPor Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Block Diagram Part No. Package Packing TSM3443CX6 RF SOT-26 3Kpcs / 7” Reel TSM3443CX6 RFG SOT-26 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.