TSM3400 Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Load Switch PA Switch Ordering Information Part No. TSM3400CX RF Package SOT-23 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o a,b Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Limit 30 ±12 5.8 30 2.5 1.4 +150 -55 to +150 Unit V V A A A W o o Thermal Performance Parameter Junction to Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJF RӨJA Limit 70 90 Unit o o C/W C/W 1/1 Version: A09 30V N-Channel MOSFET Electrical Specifications (Ta = 25o C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b .. Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±12V, VDS = 0V VDS = 24V, VGS = 0V VDS = 5V, VGS = 4.5V VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A VDS = 5V, ID = 5A IS = 1.0A, VGS =...