TSM3433 Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Load Switch PA Switch Ordering Information Part No. TSM3433CX6 RF Package SOT-26 Packing 3Kpcs / 7” Reel P-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Limit -20 ±8 -5.6 -20 -1.7 2.0 1.0 +150 - 55 to +150 Unit V V A A A W o o Ta = 25 C Ta = 70 C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol RӨJC RӨJA Limit 30 80 Unit o o C/W C/W 1/6 Version: A07 20V P-Channel MOSFET Electrical Specifications (Ta = 25o C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic...