TSM3433 - 20V P-Channel MOSFET

Taiwan Semiconductor Company

General Description

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Key Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM3433 20v p-channel mosfet by Taiwan Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	TSM3433
Manufacturer	Taiwan Semiconductor Company
File Size	402.01 KB
Description	20V P-Channel MOSFET
Datasheet	TSM3433 Datasheet

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Part Number	Description
TSM3400	30V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 42 @ VGS = -4.5V -20 57 @ VGS = -2.5V 80 @ VGS = -1.8V www.DataSheet4U.com TSM3433 SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ID (A) -5.6 -4.8 -1.4 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No.