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TSM3424
30V N-Channel MOSFET
SOT-26
Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
30 @ VGS = 10V 30
42 @ VGS = 4.5V
ID (A)
6.7 5.7
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch ● PA Switch
Ordering Information
Block Diagram
Part No.