TSM3424 Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Application - Load Switch - PA Switch Ordering Information Block Diagram Part No. Package Packing TSM3424CX6 RF SOT-26 3Kpcs / 7” Reel TSM3424CX6 RFG SOT-26 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation Ta = 25o C Ta = 75o C VDS VGS ID IDM IS 30 ±20 6.7 30 1.7 2.0 1.3 Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 -55 to...