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TSM3424 - 30V N-Channel MOSFET

Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM3424
Manufacturer Taiwan Semiconductor Company
File Size 180.12 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet TSM3424 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 @ VGS = 10V 30 42 @ VGS = 4.5V ID (A) 6.7 5.7 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Block Diagram Part No.