Datasheet Summary
..
Preliminary
High Voltage NPN Transistor with Diode
Pin assignment: 1. Base 2. Collector 3. Emitter
BVCEO = 400V BVCBO = 800V Ic = 2A VCE (SAT), = 1.0V @ Ic / Ib = 1A / 0.2A
Features
Built-in free-wheeling diode makes efficient anti saturation operation. No need to interest an hfe value because of low variable storage-time spread even though er spirit product. Low base drive requirement. Suitable for half bridge light ballast applications.
Ordering Information
Part No. TSC5302DCH TSC5302DCP Packing Tube T&R Package TO-251 TO-252
Block Diagram
Structure
Silicon triple diffused type. NPN silicon transistor with...