Datasheet Summary
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Preliminary
High Voltage NPN Transistor with Diode
TO-263
Pin assignment: 1. Base 2. Collector 3. Emitter
BVCEO = 400V BVCBO = 750V Ic = 5A VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A
Features
Built-in free-wheeling diode makes efficient anti saturation operation. No need to interest an hfe value because of low variable storage-time spread even though er spirit product. Low base drive requirement. Suitable for half bridge light ballast applications.
Ordering Information
Part No. TSC5305DCZ TSC5305DCM Packing Tube T&R Package TO-220 TO-263
Block Diagram
Structure
Silicon triple diffused type. NPN silicon transistor with...