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TSC5304ED - High Voltage NPN Transistor

General Description

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Key Features

  • Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation Low Base Drive Requirement Suitable for Half Bridge Light Ballast.

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TSC5304ED High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features ● ● ● Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation Low Base Drive Requirement Suitable for Half Bridge Light Ballast Application Block Diagram Structure ● ● ● Silicon Triple Diffused Type NPN Silicon Transistor Integrated Anti-parallel Collector-Emitter Diode Ordering Information Part No. TSC5304EDCP ROG TSC5304EDCH C5G Package TO-252 TO-251 Packing 2.