TSM160N10 Datasheet 100v N-channel Power MOSFET

Manufacturer: Taiwan Semiconductor

Overview: TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 5.

Datasheet Details

Part number	TSM160N10
Manufacturer	Taiwan Semiconductor
File Size	450.22 KB
Description	100V N-Channel Power MOSFET
Datasheet	TSM160N10-TaiwanSemiconductor.pdf

Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max. ) Low gate charge typical @ 154nC (Typ. ) Low Crss typical @ 260pF (Typ. ) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=70°C TA=25°C TA=70°C Drain Current-Pulsed Note 1 Avalanche Current, L=0.5mH Avalanche Ene.