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TSM250N02D - Dual N-Channel Power MOSFET

Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Features

  • Halogen-free.
  • Suited for 1.8V drive.

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Full PDF Text Transcription

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TSM250N02D Taiwan Semiconductor Dual N-Channel Power MOSFET 20V, 5.8A, 25mΩ Features ● Halogen-free ● Suited for 1.8V drive applications ● Low profile package APPLICATION ● Battery Pack ● Load Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.5V 25 RDS(on) (max) VGS = 2.5V 35 mΩ VGS = 1.8V 55 Qg 7.7 nC TDFN 2x2 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT TJ, TSTG 20 ±10 5.8 3.48 23.2 0.
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