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TSM250N02DCQ - Dual N-Channel Power MOSFET

Description

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Features

  • Halogen-Free according to IEC 61249-2-21.
  • Suited for 1.8V drive.

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TSM250N02DCQ Taiwan Semiconductor Dual N-Channel Power MOSFET 20V, 5.8A, 25mΩ Features ● Halogen-Free according to IEC 61249-2-21 ● Suited for 1.8V drive applications ● Low profile package ● RoHS Compliant APPLICATION ● Battery Pack ● Load Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.5V 25 RDS(on) (max) VGS = 2.5V 35 mΩ VGS = 1.8V 55 Qg 7.7 nC TDFN 2x2 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C ID TC = 100°C IDM 5.8 3.48 23.2 Total Power Dissipation @ TC = 25°C PDTOT 0.
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